notes For RGPV Bhopal CBCS CBGS Students

  • Electronic Devices & Circuits (EC-3004)

     RGPV notes CBGS

    Syllabus

    UNIT 1:
    Introduction to semiconductor physics: insulator, conductor, semiconductor and semiconductor types. Drift and diffusion carries, Hall Effects. Review of PN junction diode: PN junction diode in forward and reverse bias, temperature dependence of V-I characteristics, diode resistances, diode junction capacitance. Types of diodes: Zener Diode, Varactor Diode, Tunnel Diode, PIN Diode, Schottky Diode, LED and Photo Diodes, Switching characteristics of diode

    UNIT 2:
    Bipolar junction transistor - Construction, basic operation, current components and equations,CB, CE and CCconfiguration, input and output characteristics, Early effect, Region ofoperations: active, cut-off and saturation region. BJT as an amplifier. Ebers-Moll model, Power dissipation intransistor (Pd, max rating), Photo transistor. Transistor biasing circuits and analysis: Introduction, various biasing methods:Fixed bias,Self bias, Voltage Divider bias, Collector to base bias, Load-line analysis: DC and AC analysis, Operating Point and Bias Stabilization and Thermal Runaway. Transistor as a switch.

    UNIT 3:
    Small Signal analysis: Small signal Amplifier,Amplifier Bandwidth, Hybrid model, analysis of transistor amplifier using h-parameter, Multistage Amplifier: Cascading amplifier, Boot-strapping Technique, Darlington amplifier and cas-code amplifier, Coupling methods in multistage amplifier,Low and high frequency response, Hybrid πmodel, Current Mirror circuits.

    UNIT 4:
    LargeSignal analysis and Power Amplifiers:Class A,Class B,Class AB,Class C,Class D, Transformer coupled and Push-Pull amplifier.

    UNIT 5:
    FET construction- JFET: Construction, n-channel and p-channel, transfer and drain characteristics, parameters,Equivalent model and voltage gain, analysis of FET in CG, CS and CD configuration. Enhancement and Depletion MOSFET drainand transfer Characteristics. Uni-junction Transistor (UJT) and Thyristors:UJT: Principle of operation, characteristics, UJT relaxation oscillator, PNPN Diode and its characteristics, Silicon controlled rectifier: V-I characteristics, DIAC and TRIAC,Thyristors parameters and applications.


    NOTES


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